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FDP090N10 PDF File ( Datasheet )

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FDP090N10
Single N-Channel 100 V 208 W 116 nC PowerTrench Through Hole Mosfet - TO-220-3

PDF Datasheet
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FDP090N10 Description
MOSFET, Transistor

FDP090N10 N-Channel PowerTrench® MOSFET FDP090N10 N-Channel PowerTrench® MOSFET 100 V, 75 A, 9 mΩ November 2013 Features RDS(on) = 7.2 mΩ (Typ.) @ VGS = 10 V, ID = 75 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state r
Fairchild Semiconductor
Fairchild Semiconductor



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