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| FDP025N06 Description |
| MOSFET, Transistor
FDP025N06 N-Channel PowerTrench® MOSFET
FDP025N06
N-Channel PowerTrench® MOSFET
60 V, 265 A, 2.5 mΩ
November 2013
Features
RDS(on) = 1.9 mΩ (Typ.) @ VGS = 10 V, ID = 75 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low
RDS(on) High Power and Current Handling Capability RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state
Fairchild Semiconductor |
| Related Part Number |
FDPF4N60NZ | FDPC8012S FDP5N60NZ | FDPF10N50FT FDP030N06B_F102 | FDPF16N50T |
| DataSheet.es | 2020 | Contacto |