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| FDP023N08B Description |
| MOSFET, Transistor
FDP023N08B N-Channel PowerTrench® MOSFET
FDP023N08B
N-Channel PowerTrench® MOSFET
75 V, 242 A, 2.35 mΩ
November 2013
Features
RDS(on) = 1.96 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A Low FOM RDS(on)*QG Low Reverse Recovery Charge, Qrr Soft Reverse Recovery Body Diode Enables Highly Efficiency in Synchronous Rectification Fast Switching Speed 100% UIL Tested RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that
Fairchild Semiconductor |
| Related Part Number |
FDP060AN08A0 | FDPF5N50T FDP22N50N | FDPC8013S FDP10N50F | FDP032N08 |
| DataSheet.es | 2020 | Contacto |