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| FDN360 Description |
| Single P-Channel PowerTrenchTM MOSFET
FDN360P
February 1999
FDN360P
Single P-Channel PowerTrenchTM MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
-2 A, -30 V. RDS(on) = 0.080 Ω @
Fairchild Semiconductor |
| Single P-Channel PowerTrenchTM MOSFET
FDN360P
February 1999
FDN360P
Single P-Channel PowerTrenchTM MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
-2 A, -30 V. RDS(on) = 0.080 Ω @
Fairchild Semiconductor |
| Related Part Number |
FDN8601 | FDN86246 FDN86265P | FDN86501LZ FDN340 | FDN359AN |
| DataSheet.es | 2020 | Contacto |