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| FDMS86350ET80 Description |
| MOSFET, Transistor
FDMS86350ET80 N-Channel PowerTrench® MOSFET
January 2015
FDMS86350ET80
N-Channel PowerTrench® MOSFET
80 V, 198 A, 2.4 mΩ
Features
General Description
Extended TJ rating to 175°C Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced
Fairchild Semiconductor |
| Related Part Number |
FDME910PZT | FDMA86108LZ FDMC86340 | FDMC6688P FDMC86012 | FDMS0302S |
| DataSheet.es | 2020 | Contacto |