|
FDMS86350 PDF File ( Datasheet )
onsemi
FDMS86350
Single N-Channel 80 V 2.7 W 155 nC Silicon Surface Mount Mosfet - POWER 56-8
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Newark | 2,380 | 6.02 | Visit Site | ||
| DigiKey | 27,657 | 5.17 | Visit Site | ||
| Arrow Electronics | 700 | 4.3526 | Visit Site | ||
| Verical | 700 | 4.3526 | Visit Site | ||
| Mouser | 6,454 | 5.17 | Visit Site | ||
| Weyland Electronics Group Pte. Ltd. | 43,333 | 1.794 | Visit Site | ||
| Win Source | 43,333 | Visit Site | |||
Powered by Octopart | |||||
| FDMS86350 Description |
| N-Channel MOSFET
FDMS86350 N-Channel PowerTrench® MOSFET
April 2013
FDMS86350
N-Channel PowerTrench® MOSFET
80 V, 80 A, 2.4 mΩ Features General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A Advanced Package and Silicon combination
 Fairchild Semiconductor |
| MOSFET, Transistor
FDMS86350ET80 N-Channel PowerTrench® MOSFET
January 2015
FDMS86350ET80
N-Channel PowerTrench® MOSFET
80 V, 198 A, 2.4 mΩ
Features
General Description
Extended TJ rating to 175°C Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced
Fairchild Semiconductor |
| Related Part Number |
FDMC86570L | FDMC89521L FDMC86116LZ | FDMS030N06B FDMC7672S | FDMA6676PZ |
| DataSheet.es | 2020 | Contacto |