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FDMS86181 PDF File ( Datasheet )

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FDMS86181
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 124A, 4.2mΩ
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FDMS86181 Description
N-Channel Shielded Gate PowerTrench MOSFET

FDMS86181 N-Channel Shielded Gate PowerTrench® MOSFET FDMS86181 December 2015 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 124 A, 4.2 mΩ Features Shielded Gate MOSFET Technology Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A ADD 50% lower Qrr than other MOSFET suppliers Lowers switching noise, EMI MSL1 robust package design 100% UIL tested RoHS Compliant General Description This N-Channel MV MOSFET is produced using Fairchild Se

Fairchild Semiconductor
Fairchild Semiconductor




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