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| FDMS86181 Description |
| N-Channel Shielded Gate PowerTrench MOSFET
FDMS86181 N-Channel Shielded Gate PowerTrench® MOSFET
FDMS86181
December 2015
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 124 A, 4.2 mΩ
Features
Shielded Gate MOSFET Technology Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A ADD 50% lower Qrr than other MOSFET suppliers Lowers switching noise, EMI MSL1 robust package design 100% UIL tested RoHS Compliant
General Description
This N-Channel MV MOSFET is produced using Fairchild Se
Fairchild Semiconductor |
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FDMS86255ET150 | FDMS8333L FDMS3622S | FDMS86350ET80 FDMS3669S | FDMS86150ET100 |
| DataSheet.es | 2020 | Contacto |