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| FDMS8350L Description |
| MOSFET, Transistor
FDMS8350L N-Channel PowerTrench® MOSFET
March 2015
FDMS8350L
N-Channel PowerTrench® MOSFET
40 V, 290 A, 0.85 mΩ
Features
Max rDS(on) = 0.85 mΩ at VGS = 10 V, ID = 47 A Max rDS(on) = 1.2 mΩ at VGS = 4.5 V, ID = 38 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been esp
Fairchild Semiconductor |
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| DataSheet.es | 2020 | Contacto |