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FDMS3622S PDF File ( Datasheet )

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FDMS3622S
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET, 25V

PDF Datasheet
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FDMS3622S Description
MOSFET, Transistor

FDMS3622S PowerTrench® Power Stage December 2011 FDMS3622S PowerTrench® Power Stage 25V Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 A Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 A Q2: N-Channel Max rDS(on) = 1.4 mΩ at VGS = 10 V, ID = 34 A Max rDS(on) = 1.6 mΩ at VGS = 4.5 V, ID = 32 A Low inductance packaging shortens rise, fall times, resulting in lower switching losses MOSFET integration enables optimum layout for lowe
Fairchild Semiconductor
Fairchild Semiconductor



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