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| FDMS3620S Description |
| MOSFET, Transistor
FDMS3620S PowerTrench® PowerStage
July 2012
FDMS3620S
PowerTrench® PowerStage
25V Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel Max rDS(on) = 4.7 mΩ at VGS = 10 V, ID = 17.5 A Max rDS(on) = 5.5 mΩ at VGS = 4.5 V, ID = 16 A
Q2: N-Channel Max rDS(on) = 1.0 mΩ at VGS = 10 V, ID = 38 A Max rDS(on) = 1.2 mΩ at VGS = 4.5 V, ID = 35 A Low inductance packaging shortens rise, fall times, resulting in
lower switching losses
MOSFET integration enables optimum layout for lower circ
Fairchild Semiconductor |
| Related Part Number |
FDMS3604S | FDMS86263P FDMS8460 | FDMS3626S FDMS3686S | FDMS86550 |
| DataSheet.es | 2020 | Contacto |