FDMS3610S PDF File ( Datasheet )

FDMS3610S PowerTrench® Power Stage December 2011 FDMS3610S PowerTrench® Power Stage 25V Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 A Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 A Q2: N-Channel Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A Low inductance packaging shortens rise, fall times, resulting in lower switching losses MOSFET integration enables optimum layout for lowe