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| FDMS030N06B Description |
| MOSFET, Transistor
FDMS030N06B N-Channel PowerTrench® MOSFET
FDMS030N06B
N-Channel PowerTrench® MOSFET
60 V, 100 A, 3 mΩ
November 2013
Features
RDS(on) = 2.4 mΩ (Typ.) @ VGS = 10 V, ID = 50 A
Advanced Package and High Efficiency
and
Silicon
Combination
for
Low
RDS(on)
Fast Switching Speed
100% UIL Tested
RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance wh
Fairchild Semiconductor |
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| DataSheet.es | 2020 | Contacto |