FDMD82100L PDF File ( Datasheet )

FDMD82100L Dual N-Channel PowerTrench® MOSFET June 2014 FDMD82100L Dual N-Channel PowerTrench® MOSFET 100 V, 24 A, 19.5 mΩ Features General Description Max rDS(on) = 19.5 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 5.7 A Ideal for flexible layout in primary side of bridge topology Termination is Lead-free and RoHS Compliant 100% UIL tested Kelvin High Side MOSFET drive pin-out capability This device includes two 100V N-Channel MOSFETs in a dual Power (3.