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FDMC86340ET80 PDF File ( Datasheet )

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FDMC86340ET80
PT7 N-ch 80/20V Power Trench MOSFET - 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, 3.3X3.3 MM

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FDMC86340ET80 Description
MOSFET, Transistor

FDMC86340ET80 N-Channel Shielded Gate Power Trench® MOSFET January 2015 FDMC86340ET80 N-Channel Shielded Gate Power Trench® MOSFET 80 V, 68 A, 6.5 mΩ Features General Description Extended TJ rating to 175°C Shielded Gate MOSFET Technology Max rDS(on) = 6.5 mΩ at VGS = 10 V, ID = 14 A Max rDS(on) = 8.5 mΩ at VGS = 8 V, ID = 12 A High performance technology for extremely low rDS(on) Termination is Lead-free This N-Channel MOSFET is produced using Fairchild Semiconductor’s adva
Fairchild Semiconductor
Fairchild Semiconductor



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