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FDMC8622 PDF File ( Datasheet )

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FDMC8622
N-Channel Shielded Gate Power Trench® MOSFET 100V, 16A, 56mΩ

PDF Datasheet
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FDMC8622 Description
N-Channel Power Trench MOSFET

FDMC8622 N-Channel Power Trench® MOSFET September 2012 FDMC8622 N-Channel Power Trench® MOSFET 100 V, 16 A, 56 m: Features Max rDS(on) = 56 m: at VGS = 10 V, ID = 4 A Max rDS(on) = 90 m: at VGS = 6 V, ID = 3 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package 100% UIL Tested Termination is Lead-free and RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semico
Fairchild Semiconductor
Fairchild Semiconductor



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