FDMC86102L PDF File ( Datasheet )

FDMC86102L N-Channel Shielded Gate PowerTrench® MOSFET FDMC86102L N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 18 A, 23 mΩ June 2014 Features General Description Shielded Gate MOSFET Technology Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5.5 A Low Profile - 1 mm max in Power 33 RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.

FDMC86102LZ N-Channel Power Trench® MOSFET April 2011 FDMC86102LZ N-Channel Power Trench® MOSFET 100 V, 22 A, 24 mΩ Features Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 6.5 A Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 5.5 A HBM ESD protection level > 6 KV typical (Note 4) 100% UIL Tested RoHS Compliant General Description This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state