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| FDMC6686P Description |
| MOSFET, Transistor
FDMC6686P P-Channel PowerTrench® MOSFET
February 2015
FDMC6686P
P-Channel PowerTrench® MOSFET
-20 V, -56 A, 4 mΩ
Features
General Description
Max rDS(on) = 4 mΩ at VGS = -4.5 V, ID = -18 A Max rDS(on) = 5.7 mΩ at VGS = -2.5 V, ID = -16 A Max rDS(on) =11.5 mΩ at VGS = -1.8 V, ID = -11 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used
surface mount package
Lead-free and RoHS Compliant
This P-Channel MOSFET i
Fairchild Semiconductor |
| Related Part Number |
FDMC7572S | FDMD82100 FDMC86139P | FDMS0310AS FDMA6676PZ | FDMA86151L |
| DataSheet.es | 2020 | Contacto |