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FDJ128N PDF File ( Datasheet )

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FDJ128N
Power Field-Effect Transistor, 5.5A I(D), 20V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

PDF Datasheet
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FDJ128N Description
N-Channel 2.5 Vgs Specified PowerTrench MOSFET

FDJ128N August 2004 FDJ128N N-Channel 2.5 Vgs Specified PowerTrench MOSFET General Description This N-Channel -2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Applications Battery management Features 5.5 A, 20 V. RDS(ON) = 35 mΩ @ VGS = 4.5 V RDS(ON) = 51 mΩ @ VGS = 2.5 V Low gate charge High performance trench technology for extremely low RDS(ON) Compact industry standard SC75-6 su
Fairchild Semiconductor
Fairchild Semiconductor



Related Part Number

FDJ127P  |  FDJ129  

FDJ1027P  |  FDJ129P  

FDJ1028N  |  FDJ1032C  



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