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| FDJ1032C Description |
| Complementary PowerTrench MOSFET
FDJ1032C Complementary PowerTrench® MOSFET
F
FDJ1032C Complementary PowerTrench® MOSFET
June 2008
Features
- Q1 2.8 A, 20 V.
- Q2 3.2 A, 20 V. - Low gate charge
RDS(ON) = 160 mΩ @ VGS = 4.5 V RDS(ON) = 230 mΩ @ VGS = 2.5 V RDS(ON) = 390 mΩ @ VGS = 1.8 V
RDS(ON) = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V
- High performance trench technology for extremely low RDS(ON)
- FLMP SC75 package: Enhanced thermal performance in industry-standard package size
- RoHS Compli
Fairchild Semiconductor |
| Related Part Number |
FDJ128N | FDJ129 FDJ1027P | FDJ129P FDJ1028N | FDJ127P |
| DataSheet.es | 2020 | Contacto |