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| FDG6303 Description |
| Dual N-Channel/ Digital FET
July 1999
FDG6303N Dual N-Channel, Digital FET
General Description
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Features
25 V, 0.50 A continuous, 1.5 A peak
Fairchild Semiconductor |
| Dual N-Channel/ Digital FET
July 1999
FDG6303N Dual N-Channel, Digital FET
General Description
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Features
25 V, 0.50 A continuous, 1.5 A peak
Fairchild Semiconductor |
| Related Part Number |
FDG332PZ | FDG327NZ FDG8842CZ | FDG8850NZ FDG6335N | FDG330P |
| DataSheet.es | 2020 | Contacto |