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FDG6303 PDF File ( Datasheet )

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FDG6303N
Transistor MOSFET Negative Channel 25 Volt 0.5A 6-Pin SC-70 T/R
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FDG6303 Description
Dual N-Channel/ Digital FET

July 1999 FDG6303N Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Features 25 V, 0.50 A continuous, 1.5 A peak

Fairchild Semiconductor
Fairchild Semiconductor
Dual N-Channel/ Digital FET

July 1999 FDG6303N Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Features 25 V, 0.50 A continuous, 1.5 A peak

Fairchild Semiconductor
Fairchild Semiconductor




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