|
| FDFMA2P853T Description |
| Integrated P-Channel PowerTrench MOSFET
FDFMA2P853T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
December 2008
FDFMA2P853T
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
tm
20 V, 3.0 A, 120 mΩ Features
MOSFET:
Max rDS(on) = 120 mΩ at VGS = 4.5 V, ID = 3.0 A Max rDS(on) = 160 mΩ at VGS = 2.5 V, ID = 2.5 A Max rDS(on) = 240 mΩ at VGS = 1.8 V, ID = 1.0 A
General Description
This device is designed specifically as a single package solution for the battery charge switch in cellular han
Fairchild Semiconductor |
| Related Part Number |
FDFC3N108 | FDFMA3N109 FDFS2P103A | FDF5680 FDFMA2P029Z | FDFMJ2P023Z |
| DataSheet.es | 2020 | Contacto |