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FDD6637_F085 PDF File ( Datasheet )

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FDD6637_F085
P-Channel PowerTrench® MOSFET, -35V, -21A, 18mΩ

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FDD6637_F085 Description
P-Channel PowerTrench MOSFET

FDD6637_F085 P-Channel PowerTrench® MOSFET FDD6637_F085 P-Channel PowerTrench® MOSFET -35V, -21A, 18mΩ Features Typ rDS(on) = 9.7mΩ at VGS = -10V, ID =- 14A Typ rDS(on) = 14.4mΩ at VGS = -4.5V, ID =- 11A Typ Qg(10) = 45nC at VGS = -10V High performance trench technology for extremely low rDS(on). Qualified to AEC Q101 RoHS Compliant Applications Inverter Power Supplies December 2010 2010 Fairchild Semiconductor Corporation FDD6637_F085 Rev. C 1 www.fairchildsemi.com FDD6
Fairchild Semiconductor
Fairchild Semiconductor



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