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FDC8602 PDF File ( Datasheet )

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FDC8602
Dual N-Channel Shielded Gate PowerTrench® MOSFET, 100 V, 1.2 A, 350 mΩ

PDF Datasheet
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FDC8602 Description
Dual N-Channel Shielded Gate PowerTrench MOSFET

FDC8602 Dual N-Channel Shielded Gate PowerTrench® MOSFET May 2013 FDC8602 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 1.2 A, 350 mΩ Features General Description This N-Channel MOSFET advanced is produced using Fairchild that Semiconductor‘s PowerTrench® process Shielded Gate MOSFET Technology Max rDS(on) = 350 mΩ at VGS = 10 V, ID = 1.2 A Max rDS(on) = 575 mΩ at VGS = 6 V, ID = 0.9 A High performance trench technology for extremely low rDS(on) High power and current h
Fairchild Semiconductor
Fairchild Semiconductor



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