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| FDC653N Description |
| N-Channel Enhancement Mode Field Effect Transistor
November 1997
FDC653N N-Channel Enhancement Mode Field Effect Transistor
General Description
This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in
Fairchild Semiconductor |
| Related Part Number |
FDC2214 | FDC1004-Q1 FDC4376 | FDC37B787 FDC1004Q | FDC658AP |
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