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FDC637BNZ PDF File ( Datasheet )

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FDC637BNZ
N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.2A, 24mΩ

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FDC637BNZ Description
MOSFET, Transistor

FDC637BNZ N-Channel 2.5V Specified PowerTrench® MOSFET FDC637BNZ N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 6.2A, 24mΩ Features General Description September 2007 tm Max rDS(on) = 24mΩ at VGS = 4.5V, ID = 6.2A Max rDS(on) = 32mΩ at VGS = 2.5V, ID = 5.2A Fast switching speed Low gate charge (8nC typical) High performance trench technology for extremely low rDS(on) SuperSOT™ 6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick) HBM ESD pr
Fairchild Semiconductor
Fairchild Semiconductor



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