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FDC610PZ PDF File ( Datasheet )

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FDC610PZ
Transistor, P-channel, Powertrench Mosfet, 30V, 4.9A, 42MOHM, SUPERSOT6

PDF Datasheet
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FDC610PZ Description
MOSFET, Transistor

FDC610PZ P-Channel PowerTrench® MOSFET FDC610PZ P-Channel PowerTrench® MOSFET 30V, 4.9A, 42mΩ Features General Description August 2007 tm Max rDS(on) = 42mΩ at VGS = 10V, ID = 4.9A Max rDS(on) = 75mΩ at VGS = 4.5V, ID = 3.7A Low gate charge (17nC typical). High performance trench technology for extremely low rDS(on). SuperSOTTM 6 package: small footprint (72% smaller than standard SO 8) low profile (1mm thick). RoHS Compliant This P-Channel MOSFET is produced using Fai
Fairchild Semiconductor
Fairchild Semiconductor



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