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FDC602P PDF File ( Datasheet )

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FDC602P
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.5A, 35mΩ

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FDC602P Description
P-Channel 2.5V Specified PowerTrench MOSFET

FDC602P November 1999 ADVANCE INFORMATION FDC602P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V). Features = 5.5 A, 12 V RDS(ON) = 0.033 Ω @ VGS = 4.5 V RDS(ON) = 0.052 Ω @ VGS = 2.5 V = Fast switching speed. = High performance trench technology for
Fairchild Semiconductor
Fairchild Semiconductor



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