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| FDC3601N Description |
| Dual N-Channel 100V Specified PowerTrench MOSFET
FDC3601N
August 2001
FDC3601N
Dual N-Channel 100V Specified PowerTrench MOSFET
General Description
These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8
Fairchild Semiconductor |
| Related Part Number |
FDC4376 | FDC37B787 FDC2214 | FDC1004-Q1 FDC658AP | FDC2112 |
| DataSheet.es | 2020 | Contacto |