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FDC3601N PDF File ( Datasheet )

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FDC3601N
Dual N-Channel 100V Specified PowerTrench® MOSFET 1.0A, 500mΩ
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FDC3601N Description
Dual N-Channel 100V Specified PowerTrench MOSFET

FDC3601N August 2001 FDC3601N Dual N-Channel 100V Specified PowerTrench MOSFET General Description These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8

Fairchild Semiconductor
Fairchild Semiconductor




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