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| FDB5800 Description |
| N-Channel Logic Level PowerTrench MOSFET
FDB5800 N-Channel Logic Level PowerTrench® MOSFET
FDB5800
N-Channel Logic Level PowerTrench® MOSFET
60 V, 80 A, 6 mΩ
November 2013
Features
RDS(on) = 4.6 mΩ (Typ.), VGS = 10 V, ID = 80 A High Performance Trench Technology for Extermly
Low RDS(on)
Low Gate Charge
High Power and Current Handing Capability
RoHs Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resist
Fairchild Semiconductor |
| Related Part Number |
FDB3501W | FDB2510PT FDB070AN06A0 | FDB3504T FDB2501PT | FDB3508T |
| DataSheet.es | 2020 | Contacto |