DataSheet.es    

FDB082N15A PDF File ( Datasheet )

onsemi
FDB082N15A
N-Channel PowerTrench® MOSFET 150V, 105A, 8.2mΩ

PDF Datasheet
DistributorStock110100Link
Rochester Electronics3033.22Visit Site
Verical1954.025Visit Site
DigiKey2098.155.5284.0436Visit Site
Mouser7118.155.534.05Visit Site
Microchip USA280Visit Site
Component Stockers USA4,8975.955.14.25Visit Site
Win Source2,000Visit Site
Powered by Octopart



 



FDB082N15A Description
MOSFET, Transistor

FDB082N15A N-Channel PowerTrench® MOSFET April 2015 FDB082N15A N-Channel PowerTrench® MOSFET 150 V, 117 A, 8.2 mΩ Features RDS(on) = 6.7 mΩ (Typ.) @ VGS = 10 V, ID = 75 A Fast Switching Speed Low Gate Charge, QG = 64.5 nC (Typ.) High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to m
Fairchild Semiconductor
Fairchild Semiconductor



Related Part Number

FDB610  |  FDB3501PW  

FDB2508T  |  FDB44N25  

FDB047N10  |  FDB3504PT  



DataSheet.es    |   2020   |  Contacto