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F1010ES PDF File ( Datasheet )

Infineon
IRF1010ESTRLPBF
Single N-Channel 60 V 12 mOhm 130 nC HEXFET® Power Mosfet - D2PAK

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F1010ES Description
IRF1010ES

PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated G HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 12mΩ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized dev
Power MOSFET
Power MOSFET



Related Part Number

F102  |  F103  

F101  |  F10U150S  

F10P60F  |  F101L  



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