|
| C5460 Description |
| NPN Transistor, 2SC5460
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5460
Dynamic Focus Applications High-Voltage Switching Applications High-Voltage Amplifier Applications
2SC5460
Unit: mm
High breakdown voltage: VCEO = 800 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 800 V
Collector-emitter voltage
VCEO 800 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 50 mA
Base current
IB 25 mA
Collector power dissipation
Ta = 25°C Tc =
Toshiba |
| APD module
MODULE
APD module
C5460 series
APD module integrated with peripheral circuits
Features Applications
l Evaluation of APD Two types of APDs with different active areas (φ1.5 mm, l Fluorescence measurement φ3.0 mm) are provided. l Bar code readers l On-board high sensitivity circuit optimized for APD evaluation l Particle counters An APD and a low-noise current-to-voltage amplifier circuit l Film scanners are mounted on a compact PC board. The current-to-voltage amplifier circuit features a
Hamamatsu Corporation |
| Related Part Number |
C5418 | C5443 C547C | C5450 C5468 | C5416 |
| DataSheet.es | 2020 | Contacto |