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| C5200 Description |
| NPN Transistor, 2SC5200
2SC5200
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5200
Power Amplifier Applications
Unit: mm High breakdown voltage: VCEO = 230 V (min) Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifier’s output stage
Maximum Ratings (Tc = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VC
Toshiba |
| Related Part Number |
C5213 | C5227 C5296 | C5238 C5245 | C5255 |
| DataSheet.es | 2020 | Contacto |