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| C5147 Description |
| NPN silicon Transistor
--APPLICATION:FREQUENCY AMPLIFIER APPLICATION,
C5147
NPN silicon
--MAXIMUM RATINGS(Ta=25℃)
PARAMETER
SYMBOLRATING UNIT
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation (Ta=25℃) Collector Power Dissipation (Tc=25℃) Junction Temperature Storage Temperature Range
VCBO
300 V
VCEO
300 V
VEBO
5V
IC 100 mA
PC 2 W
PC 10 W
TJ 150 ℃
Tstg 55~150 ℃
1 TO-220 1.Base 2.Collector 3.Emitter
-- ELECTRICAL CH
FGX |
| NPN Transistor, 2SC5147
Transistors
Medium Power Transistor (Chroma Output) (300V, 0.1A)
2SC5147
2SC5147
!Features 1) High breakdown voltage. (BVCEO = 300V) 2) Low collector output capacitance.
(Typ.3pF at VCB = 30V) 3) Wide SOA. (safe operating area) 4) Ideal for color TV chroma output and amplification of
video signals.
!Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current
Collector power dissipation
Junction temperature Storage temp
ROHM Semiconductor |
| Related Part Number |
C512A-WNS | C513A-MSN C515 | C513A-MSS C513A-WSN | C5168 |
| DataSheet.es | 2020 | Contacto |