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| C5022 Description |
| NPN Transistor, 2SC5022
2SC5022
Silicon NPN Triple Diffused
Application
High voltage amplifier
Features
High breakdown voltage V (BR)CEO = 1500 V Min
Outline
TO-220FM
12 3
1. Base 2. Collector 3. Emitter
2SC5022
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC I C (peak) PC Tj Tstg Ratings 1500 1500 6 20
Hitachi Semiconductor |
| Related Part Number |
C503B-WAN | C5023 C503B-ABN | C503B-RBS C5012 | C504 |
| DataSheet.es | 2020 | Contacto |