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| C1226 Description |
| CMOS
® ISO 9001 Registered
Process C1226
CMOS 1.2 m 100V CMOS, Double Metal - Double Poly
Electrical Characteristics
T = 25oC Unless otherwise noted
Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor Threshold Voltage VTN Body Factor γN Conduction Factor βN Effective Channel Length LeffN Width Encroachment WN Punch Through Voltage BVDSSN Poly Field Threshold Voltage VTFPN Symbol
IMP |
| NPN Transistor, 2SC1226
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1226 2SC1226A
DESCRIPTION ·With TO-202 package ·Complement to type 2SA699, 699A APPLICATIONS ·For medium power amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-202) and symbol Emitter DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL PARAMETER 2SC1226 VCBO Collector-base voltage 2SC1226A 2SC1226 VCEO Collector-emitter voltage 2SC1226A VEBO IC ICM IB PC Tj Tstg E
Panasonic Semiconductor |
| Related Part Number |
C122A | C122M C1251C | C12PH C122D | C122E |
| DataSheet.es | 2020 | Contacto |