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BUZ70 PDF File ( Datasheet )

VBsemi
BUZ70-VB
N, 60V, 25A, Rds(on), 80M¦¸@10V, M¦¸@4.5V, 20VGS(¡ÀV), 1~4VTH(V) , TO220, Plc
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BUZ70 Description
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

BUZ 70 SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 70 VDS 60 V ID 12 A RDS(on) 0.15 Ω Package TO-220 AB Ordering Code C67078-S1334-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 12 Unit A ID IDpuls 48 TC = 33 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 12 1 mJ ID = 12 A, VDD = 25 V,

Siemens Semiconductor Group
Siemens Semiconductor Group
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

BUZ 70 L SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Logic Level Pin 1 G Type BUZ 70 L Pin 2 D Pin 3 S VDS 60 V ID 12 A RDS(on) 0.15 Ω Package TO-220 AB Ordering Code C67078-S1325-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 12 Unit A ID IDpuls 48 TC = 33 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 12 1 mJ ID = 12

Siemens Semiconductor Group
Siemens Semiconductor Group




Related Part Number

BUZ91AF  |  BUZ31H  

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BUZ30AH  |  BUZ31H3046  



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