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| BUZ70 Description |
| SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ 70
SIPMOS ® Power Transistor
N channel Enhancement mode Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 70
VDS
60 V
ID
12 A
RDS(on)
0.15 Ω
Package TO-220 AB
Ordering Code C67078-S1334-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 12 Unit A
ID IDpuls
48
TC = 33 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
12 1 mJ
ID = 12 A, VDD = 25 V,
Siemens Semiconductor Group |
| SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
BUZ 70 L
SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Logic Level
Pin 1 G Type BUZ 70 L
Pin 2 D
Pin 3 S
VDS
60 V
ID
12 A
RDS(on)
0.15 Ω
Package TO-220 AB
Ordering Code C67078-S1325-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 12 Unit A
ID IDpuls
48
TC = 33 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
12 1 mJ
ID = 12
Siemens Semiconductor Group |
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BUZ91AF | BUZ31H BUZ102S | BUZ31H3045A BUZ30AH | BUZ31H3046 |
| DataSheet.es | 2020 | Contacto |