BUZ42 PDF File ( Datasheet )

BUZ 42 SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 42 VDS 500 V ID 4A RDS(on) 2Ω Package TO-220 AB Ordering Code C67078-S1311-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 4 Unit A ID IDpuls 16 TC = 30 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 4 6 mJ ID = 4 A, VDD = 50 V, RGS = 2

BUZ42 Semiconductor Data Sheet October 1998 File Number 2417.1 4A, 500V, 2.000 Ohm, N-Channel Power MOSFET Features 4A, 500V [ , Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 2.000Ω (BUZ42 eld effect transistor designed for applications such as SOA is Power Dissipation Limited ) switching regulators, switching converters, motor drivers, , Subject relay drivers, and drivers for high power bipolar switching Nanosecond Switching Speeds transistors requiring h