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BUZ205 PDF File ( Datasheet )

VBsemi
BUZ205-VB
N, 600V, 8A, Rds(on), 780M¦¸@10V, 1070M¦¸@4.5V, 20VGS(¡ÀV), 3VTH(V) , TO220
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BUZ205 Description
SIPMOS Power Transistor (N channel Enhancement mode FREDFET)

SIPMOS® Power Transistor q N channel q Enhancement mode q FREDFET BUZ 205 Type BUZ 205 VDS 400 V ID 6.0 A RDS (on) 1.0 Ω Package 1) TO-220 AB Ordering Code C67078-A1401-A2 Maximum Ratings Parameter Continuous drain current, TC = 35 ˚C Pulsed drain current, TC = 25 ˚C Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Power dissipation, TC = 25 ˚C Operating and storage temperature range Thermal resistance, chip-case DIN humidity category, DIN 40 040 IEC clima

Siemens Semiconductor Group
Siemens Semiconductor Group




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