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BUZ102SL PDF File ( Datasheet )

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BUZ102SL
N-CHANNEL POWER MOSFET / N-Channel 55 V 47A (Tc) 120W (Tc) Through Hole TO-220AB
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BUZ102SL Description
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)

BUZ 102 SL SPP47N05L SIPMOS ® Power Transistor N channel Enhancement mode Logic Level Avalanche-rated dv , dt rated 175°C operating temperature also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 47 A RDS(on) 0.028 Ω Package Ordering Code BUZ 102 SL TO-220 AB Q67040-S4010-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID A 47 33 Pulsed drain current TC = 25 °C IDpuls 188 E AS Avalanche energy, single

Siemens Semiconductor Group
Siemens Semiconductor Group
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)

Preliminary data BUZ 102SL-4 SIPMOS ® Power Transistor Quad-channel Enhancement mode Logic level Avalanche-rated dv, dt rated Type BUZ 102SL-4 VDS 55 V ID 6.2 A RDS(on) 0.033 Ω Package P-DSO-28 Ordering Code C67078-S. . . .- . . Maximum Ratings Parameter Continuous drain current one channel active Symbol Values 6.2 Unit A ID IDpuls 24.8 TA = 25 °C Pulsed drain current one channel active TA = 25 °C Avalanche energy, single pulse EAS 245 dv, dt 6 mJ ID = 6.2 A, VDD = 25 V

Siemens Semiconductor Group
Siemens Semiconductor Group




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