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| BUZ102SL Description |
| SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)
BUZ 102 SL
SPP47N05L
SIPMOS ® Power Transistor
N channel Enhancement mode Logic Level Avalanche-rated dv , dt rated 175°C operating temperature also in SMD available
Pin 1 Pin 2 Pin 3
G
D
S
Type
VDS 55 V
ID 47 A
RDS(on) 0.028 Ω
Package
Ordering Code
BUZ 102 SL
TO-220 AB
Q67040-S4010-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
TC = 25 °C TC = 100 °C
ID
A 47 33
Pulsed drain current
TC = 25 °C
IDpuls
188
E AS
Avalanche energy, single
Siemens Semiconductor Group |
| SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
Preliminary data
BUZ 102SL-4
SIPMOS ® Power Transistor
Quad-channel Enhancement mode Logic level Avalanche-rated dv, dt rated
Type BUZ 102SL-4
VDS
55 V
ID
6.2 A
RDS(on)
0.033 Ω
Package P-DSO-28
Ordering Code C67078-S. . . .- . .
Maximum Ratings Parameter Continuous drain current one channel active Symbol Values 6.2 Unit A
ID IDpuls
24.8
TA = 25 °C
Pulsed drain current one channel active
TA = 25 °C
Avalanche energy, single pulse
EAS
245 dv, dt 6
mJ
ID = 6.2 A, VDD = 25 V
Siemens Semiconductor Group |
| Related Part Number |
BUZ211 | BUZ102S BUZ30AH | BUZ31H3046 BUZ31H | BUZ91AF |
| DataSheet.es | 2020 | Contacto |