DataSheet.es    

BUZ100 PDF File ( Datasheet )

VBsemi
BUZ100-VB
N, 60V, 120A, Rds(on), 5M¦¸@10V, 44M¦¸@4.5V, 20VGS(¡ÀV), 3.6VTH(V) , TO220 , Ups
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BUZ100 Description
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)

BUZ 100 SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated dv, dt rated Ultra low on-resistance 175°C operating temperature also in TO-220 SMD available Pin 1 G Type BUZ 100 Pin 2 D Pin 3 S VDS 50 V ID 60 A RDS(on) 0.018 Ω Package TO-220 AB Ordering Code C67078-S1348-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 60 Unit A ID IDpuls 240 TC = 101 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 250 dv, dt 6 mJ I

Siemens Semiconductor Group
Siemens Semiconductor Group
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

BUZ 100L SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Logic Level dv, dt rated Ultra low on-resistance 175 °C operating temperature also in TO-220 SMD available Pin 1 G Pin 2 D Pin 3 S Type BUZ 100L VDS 50 V ID 60 A RDS(on) 0.018 Ω Package TO-220 AB Ordering Code C67078-S1354-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 60 Unit A ID IDpuls 240 TC = 101 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 25

Siemens Semiconductor Group
Siemens Semiconductor Group




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BUZ91AF  |  BUZ102S  



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