BDX63B PDF File ( Datasheet )

BDX63 BDX63A BDX63B BDX63C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 9.0 max. 2. 5 26.6 max. 4.2 39.5 max. B 30.1 E 20.3 max. 1 .0 NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 16.9 10.9 12.8 TO3 Package. Case connected to collector. PNP complements are: BDX62, BDX62A, BDX62B, BDX62C. ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated) BDX BDX B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 8A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDX62, A, B, C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDX63 Collector-Base Voltage BDX63A BDX63B BDX63C BDX63 Collector-Emitter Voltage BDX63A BDX63B BDX63C VEBO IC ICM IB B BDX63, A, B,