BCW70 PDF File ( Datasheet )

BCW69,70 CASE 318-02, 03, STYLE 6 SOT-23 (TO-236AA, AB) GENERAL PURPOSE TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Symbol vCEO v EBO THERMAL CHARACTERISTICS Characteristic *Total Device Dissipation, Ty\ = 25°C Derate above 25°C Symbol PD Storage Temperature 'stg *Thermal Resistance Junction to Ambient R 0JA Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. ELECTRICAL CHARACTERISTICS (TA = 25°C unless o

Continental Device India Limited An ISO, TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW69 BCW70 SILICON PLANAR EPITAXIAL TRANSISTORS P N P transistors Marking BCW69 = H1 BCW70 = H2 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS D.C. current gain at Tj = 25 °C IC = 2 mA; VCE = 5 V Collector base voltage (open emitter) Collector emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb