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| BCP5316Q Description |
| 80V PNP MEDIUM POWER TRANSISTORS
Description
This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications.
Features
BVCEO > -80V IC = -1A High Continuous Collector Current ICM = -2A Peak Pulse Current 2W Power Dissipation Low Saturation Voltage VCE(sat) < -500mV @ -0.5A Complementary NPN type: BCP5616Q Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Diodes |
| 80V PNP MEDIUM POWER TRANSISTORS
Description
This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications.
Features
BVCEO > -80V IC = -1A High Continuous Collector Current ICM = -2A Peak Pulse Current 2W Power Dissipation Low Saturation Voltage VCE(sat) < -500mV @ -0.5A Complementary NPN type: BCP5616Q Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Diodes |
| Related Part Number |
BCP69T1G | BCP8050 BCP56-16T1G | BCP56-10T1G BCPA1666 | BCP56-16T3G |
| DataSheet.es | 2020 | Contacto |