AS4CM4EOQ PDF File ( Datasheet )

March 2001 ® AS4C4M4EOQ AS4C4M4E1Q 4M 4 CMOS QuadCAS DRAM (EDO) family Features Organization: 4,194,304 words × 4 bits High speed - 50, 60 ns RAS access time - 25, 30 ns column address access time - 12, 15 ns CAS access time Low power consumption - Active: 495 mW max - Standby: 5.5 mW max, CMOS I, O Extended data out Refresh - 4096 refresh cycles, 64 ms refresh interval for 4C4M4EOQ - 2048 refresh cycles, 32 ms refresh interval for AS4C4M4E1Q - RAS-only and hidden refresh or CAS-befo