ACE4953B PDF File ( Datasheet )

ACE4953B Dual P-Channel Enhancement Mode Field Effect Transistor Description The ACE4953B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Features VDS(V)=-20V ID=-5.5A (VGS=-10V) RDS(ON)<55mΩ (VGS=-10V) RDS(ON)<58mΩ (VGS=-4.5V) RDS(ON)<80mΩ (VGS=-2.5V) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage Gate-Source Voltage Drain Current (Continuou