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| A1930 Description |
| PNP Transistor, 2SA1930
2SA1930
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA1930
Power Amplifier Applications Driver Stage Amplifier Applications
Unit: mm
High transition frequency: fT = 200 MH- (typ.) Complementary to 2SC5171
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj
Toshiba Semiconductor |
| Related Part Number |
A190D | A190PB A190A | A190M A190S | A190T |
| DataSheet.es | 2020 | Contacto |