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| A1887 Description |
| PNP Transistor, 2SA1887
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1887
High-Current Switching Applications
2SA1887
Unit: mm
Low collector saturation voltage: VCE (sat) = 0.4 V (max) at IC = 5 A
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC
PC
Tj Tstg
Rating
80 50 7 10 2.0
Toshiba |
| Related Part Number |
A180 | A1813 A1831 | A1873 A1850 | A1834 |
| DataSheet.es | 2020 | Contacto |