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7MBR75VP060-50 PDF File ( Datasheet )

Fuji
7MBR75VP060-50
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel
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7MBR75VP060-50 Description
Power Devices (IGBT)

6 IGBT V 6th Gen. IGBT Module V-series A compact design allows for greater power output · High performance 6th gen. IGBT, FWD chipset · Tj(max.)=175°C, Tj(op)=150°C Environmentally friendly modules · Easy assemblage, solder free options · RoHS compliant Turn-on switching characteristics · Improved noise-loss trade-off · Reduced turn-on dv, dt, excellent turn-on dic, dt Turn-off switching characteristic · Soft switching behavior, turn-off oscillation free 125 600V-100A (chip level)

ETC
ETC
IGBT MODULE

7MBR75VP060-50 IGBT MODULE (V series) 600V , 75A , PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply IGBT Modules Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Symbols Conditions Inverter Collector-Emitter voltage Gate-Emitter voltage Collector cu

Fuji Electric
Fuji Electric




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