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7MBR15VKB120-50 PDF File ( Datasheet )

Fuji Electric
7MBR15VKB-120-50
Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel
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7MBR15VKB120-50 Description
Power Devices (IGBT)

6 IGBT V 6th Gen. IGBT Module V-series A compact design allows for greater power output · High performance 6th gen. IGBT, FWD chipset · Tj(max.)=175°C, Tj(op)=150°C Environmentally friendly modules · Easy assemblage, solder free options · RoHS compliant Turn-on switching characteristics · Improved noise-loss trade-off · Reduced turn-on dv, dt, excellent turn-on dic, dt Turn-off switching characteristic · Soft switching behavior, turn-off oscillation free 125 600V-100A (chip level)

ETC
ETC




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